PART |
Description |
Maker |
HM10470-20 |
4K x 1-Bit Fully Vecoded RAM
|
Hitachi
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HM10422 |
256 x 4-Bit Fully Vecoded RAM
|
Hitachi
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HM10494 |
16K x 4-Bit Fully Vecoded RAM
|
Hitachi
|
HYB3118165BST-50 HYB5118165BST-50 HYB3118165BSJ-60 |
High-Speed Fully-Differential Amplifiers 8-MSOP -40 to 85 1M X 16 EDO DRAM, 50 ns, PDSO44 1M x 16-Bit Dynamic RAM 1k Refresh 100万16位动态随机存储器经销商刷 1M×16-Bit Dynamic RAM(1M×16动态RAM(快速页面模) 1M×16-Bit Dynamic RAM (Hyper Page Mode-EDO)(1M×16动RAM)
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Siemens Semiconductor Group SIEMENS AG
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M38259EFDFP M38258E4-FP M38258E4-FS M38258E4-GP M3 |
3825 Series Microcontrollers: On-Chip Segment LCDDrivers with A-D Converter RAM size: 1536 bytes; single-chip 8-bit CMOS microcomputer RAM size: 192 bytes; single-chip 8-bit CMOS microcomputer RAM size: 256 bytes; single-chip 8-bit CMOS microcomputer RAM size: 384 bytes; single-chip 8-bit CMOS microcomputer RAM size: 512 bytes; single-chip 8-bit CMOS microcomputer RAM size: 1024 bytes; single-chip 8-bit CMOS microcomputer RAM size: 640 bytes; single-chip 8-bit CMOS microcomputer RAM size: 768 bytes; single-chip 8-bit CMOS microcomputer RAM size: 896 bytes; single-chip 8-bit CMOS microcomputer RAM size: 2048 bytes; single-chip 8-bit CMOS microcomputer
|
Mitsubishi Electric Corporation
|
AD5060ARJZ-1REEL7 AD5060ARJZ-2REEL7 AD5060YRJZ-1RE |
Full Accurate 3 V/5 V 16-Bit VOUT nanoDAC® Converter, Output Buffered, in a Sot 23; Package: SOT-23; No of Pins: 8; Temperature Range: Industrial SERIAL INPUT LOADING, 4 us SETTLING TIME, 16-BIT DAC, PDSO8 Fully Accurate 14-/16-Bit VOUT nanoDAC SPI Interface 2.7 V to 5.5 V, in an SOT-23 Fully Accurate 14-/16-Bit VOUT nanoDAC?SPI Interface 2.7 V to 5.5 V, in an SOT-23
|
Analog Devices, Inc. ANALOG DEVICES INC
|
TMP90PM36 |
A System Evaluation LSI With 8-Bit CPU,One-Time PROM(32968 x 8-Bit),RAM(1024 x 8-Bit)(系统评估大规模集成电路(集成8位CPU,一次可编程ROM(32968 x 8,RAM(1024 x 8)
|
Toshiba Corporation
|
UPD431000AGU-70LL-9JH UPD431000AGU-70LL-9KH UPD431 |
1M-bit (128K-word by 8-bit) CMOS static RAM, 70ns 1M-bit (128K-word by 8-bit) CMOS static RAM, 100ns 1M-bit (128K-word by 8-bit) CMOS static RAM, 120ns 1M-bit (128K-word by 8-bit) CMOS static RAM, 150ns
|
NEC
|
HYB5117800BSJ-50- Q67100-Q1092 Q67100-Q1093 HYB311 |
2M x 8 - Bit Dynamic RAM 2k Refresh 2M×8-Bit Dynamic RAM (Fast Page Mode)(2M×8动态RAM(快速页面模)
|
SIEMENS AG SIEMENS A G
|
V850E1 V850E_SV2 V850E_IA1 V850E_IA2 V850E_IA3 V85 |
V850E/IA2 Flash product ROM: 128 KB, RAM: 6 KB V850E/IA2 Mask product ROM: 128 KB, RAM: 6 KB V850E/IA3 Flash product ROM: 256 KB, RAM: 12 KB ROM-less version; Internal RAM: 4K bytes 32-bit RISC single-chip microcontroller V850E/SV2 V850E/IA4 Flash memory product ROM: 256 KB, RAM: 12 KB 32-Bit Microprocessor Core
|
NEC[NEC]
|
M5M5V208FP-10LL-W M5M5V208FP-10L-W M5M5V208FP-12LL |
From old datasheet system Coaxial Cable; Coaxial RG/U Type:8; Impedance:50ohm; Conductor Size AWG:16; No. Strands x Strand Size:19 x 29; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位(262144 - Word8位)的CMOS静态RAM 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位(262144 - Word位)的CMOS静RAM 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位(262144 - Word位)的CMOS静态RAM
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http:// MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
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